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NE650R479A-T1 Datasheet - NEC => Renesas Technology

NE650R479A-T1 image

Part Name
NE650R479A-T1

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8 Pages

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58.7 kB

MFG CO.
NEC
NEC => Renesas Technology 

DESCRIPTION
The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.


FEATURES
• High Output Power : PO (1 dB) = +26 dBm typ.
• High Linear Gain : 14 dB typ.
• High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 100 mA, f = 1.9 GHz

Page Link's: 1  2  3  4  5  6  7  8 

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