Description
   These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.

FEATUREs
• High Density Cell Design for Low RDS(on)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability
• ESD Protection Level: HBM > 100 V, CDM > 2 kV
• This Device is Pb−Free and Halogen Free