NDL5421PSD Datasheet - California Eastern Laboratories.
MFG CO.

California Eastern Laboratories.
DESCRIPTION
The NDL5421P Series is an InGaAs PIN photo diode module with multimode fiber. It is designed for 2.5 Gb/s optical fiber communication systems and covers the wavelength range between 1000 and 1600 with high efficiency.
FEATURES
• SMALL DARK CURRENT: ID = 0.1 nA
• HIGH QUANTUM EFFICIENCY:
η = 86% at λ = 1300 nm
η = 75% at λ = 1550 nm
• DETECTING AREA SIZE: φ 50 µm
• LOW OPERATING VOLTAGE: VR = 5 V
• LOW TERMINAL CAPACITANCE: Ct = 0.7 pF at f = 1.0 MHz, VR = 5 V
• COAXIAL MODULE WITH MULTIMODE FIBER OR OPTIONAL SINGLEMODE FIBER: GI-50/125, SM-9/125
• HIGH SPEED RESPONSE: fC = 2.5 GHz MIN
Part Name
Description
View
MFG CO.
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS φ80 µm InGaAs PIN PHOTO DIODE MODULE
California Eastern Laboratories.
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS φ50 µm InGaAs AVALANCHE PHOTO DIODE MODULE
California Eastern Laboratories.
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS φ30 µm InGaAs AVALANCHE PHOTO DIODE MODULE
California Eastern Laboratories.
1000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ30 µm InGaAs AVALANCHE PHOTO DIODE MODULE
NEC => Renesas Technology
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ80 µm InGaAs PIN PHOTO DIODE MODULE
NEC => Renesas Technology
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ80 µm InGaAs PIN PHOTO DIODE MODULE
NEC => Renesas Technology
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE
NEC => Renesas Technology
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ30 µm InGaAs AVALANCHE PHOTO DIODE MODULE
NEC => Renesas Technology
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ 30 µm InGaAs AVALANCHE PHOTO DIODE MODULE
Renesas Electronics
2.5 Gb/s OPTICAL FIBER COMMUNICATIONS φ50 µm InGaAs AVALANCHE PHOTO DIODE MODULE WITH MMF
California Eastern Laboratories.