Extremefast Diode Die with
Sinterable Top Metal 750 V, 225 A

FEATUREs
• AEC−Q101 Qualified and PPAP Capable
• Maximum Junction Temperature 175°C
• Extremefast Technology Generation 2 with Improved Soft Recovery
• Low Forward Voltage: VF = 1.75 V (Typ.) @ IF = 225 A
• Anode Pad Covered with Sinterable Metal Layer

APPLICATIONs
• Automotive Traction Modules
• General Power Modules