1805-1880 MHz, 44 W AVG., 28 V 2 x W-CDMA LATERAL N-CHANNEL RF POWER MOSFET

Designed for W-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

• Typical 2-carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 44 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
   Power Gain — 15.9 dB
   Drain Efficiency — 27.5%
   IM3 @ 10 MHz Offset — -37 dBc @ 3.84 MHz Channel Bandwidth
   ACPR @ 5 MHz Offset — -41 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1880 MHz, 190 Watts CW Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.