MRF5812R1 Datasheet - Microsemi Corporation
MFG CO.
Microsemi Corporation
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
FEATUREs
• Low Noise - 2.5 dB @ 500 MHZ
• Associated Gain = 15.5 dB @ 500 MHz
• Ftau - 5.0 GHz @ 10v, 75mA
• Cost Effective SO-8 package
Part Name
Description
View
MFG CO.
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technology
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
New Jersey Semiconductor
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Unspecified
