MRF553 Datasheet - Microsemi Corporation
MFG CO.
Microsemi Corporation
DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range.
FEATUREs
• Specified @ 12.5 V, 175 MHz Characteristics
• Output Power = 1.5 W
• Minimum Gain = 11.5 dB
• Efficiency 60% (Typ)
• Cost Effective PowerMacro Package
• Electroless Tin Plated Leads for Improved Solderability
Part Name
Description
View
MFG CO.
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technology
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
New Jersey Semiconductor
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Unspecified
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technology
