Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment.
• Specified 50 V, 30 MHz characteristics
Output power = 250 W
Minimum gain = 12 dB
Efficiency = 45%
• Intermodulation distortion @ 250 W (PEP) —
IMD = –30 dB (max)
• 100% tested for load mismatch at all phase angles with 3:1 VSWR
Part Name
Description
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MFG CO.
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 80W, 30MHz, 12.5V
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 80W, 30MHz, 12.5V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 60W, 30MHz, 12.5V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.