RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications.

• Typical CDMA Performance: 1960 MHz, 26 Volts IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
    Output Power — 7.5 Watts
    Power Gain — 12.5 dB
    Adjacent Channel Power —
        885 kHz: -47 dBc @ 30 kHz BW
        1.25 MHz: -55 dBc @ 12.5 kHz BW
        2.25 MHz: -55 dBc @ 1 MHz BW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW Output Power

FEATUREs
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.