The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs

Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

• CDMA Performance @ 1990 MHz, 26 Volts
   IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
   885 kHz — –47 dBc @ 30 kHz BW
   1.25 MHz — –55 dBc @ 12.5 kHz BW
   2.25 MHz — –55 dBc @ 1 MHz BW
   Output Power — 4.5 Watts Avg.
   Power Gain — 13.5 dB
   Efficiency — 17%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.