The RF MOSFET Line
RF Power Field Effect TransistorsThe RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM1805 – 1880 MHz.

• Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)
   Power Gain — 13 dB (Typ) @ 60 Watts
   Efficiency — 45% (Typ) @ 60 Watts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
• Excellent Thermal Stability
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.