NPN SILICON ANNULAR TRANSISTORS

. . . designed for low-current amplifier applications.

• Collector-Emitter Breakdown Voltage -
   BVCEO = 45 Vdc (Min) @ Ic = 1.0 mAdc
• Output Capacitance -
   Cob= 3.5 pF (Max) @ VCB = 10 mAdc
• Full Designers Curves