MP4304(2002) Datasheet - Toshiba
MFG CO.

Toshiba
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
• Small package by full molding (SIP 12 pin)
• High collector power dissipation (4 devices operation)
: PT = 4.4 W (Ta = 25°C)
• High collector current: IC (DC) = 3 A (max)
• High DC current gain: hFE = 600 (min) (VCE = 2 V, IC = 1 A)
Part Name
Description
View
MFG CO.
TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR 4 IN 1) ( Rev : 2000 )
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) ( Rev : 2000 )
Toshiba
TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR 4 IN 1) ( Rev : 2000 )
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) ( Rev : 2002 )
Toshiba
TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) ( Rev : 2002 )
Toshiba
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) ( Rev : 2002 )
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) ( Rev : 2002 )
Toshiba
TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type (Darlington power transistor 4 in 1) ( Rev : 2002 )
Toshiba
TOSHIBA POWER TRANSISTOR MODULE SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER TRANSISTOR 4 IN 1) ( Rev : 2000 )
Toshiba