MMBD4448W Datasheet - Transys Electronics Limited
MFG CO.

Transys Electronics Limited
SWITCHING DIODE
FEATURES
Power dissipation
PD: 200 mW (Tamb=25℃)
Collector current
IO: 250 mA
Collector-base voltage
VR: 75 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
Part Name
Description
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MFG CO.
SOT-323 Plastic-Encapsulated Diode
Transys Electronics Limited
SOT-323 Plastic-Encapsulated Diode
Transys Electronics Limited
SOT-323 Plastic-Encapsulated Diode
Transys Electronics Limited
SOT-323 Plastic-Encapsulated Diode
Transys Electronics Limited
SOT-323 Plastic-Encapsulated DIODE
Transys Electronics Limited
SOT-323 Plastic-Encapsulated Diode
Transys Electronics Limited
SOT-323 Plastic-Encapsulated Diode
Transys Electronics Limited
SOT-323 Plastic-Encapsulated Diode
Transys Electronics Limited
SOT-323 Plastic-Encapsulated Diode
Transys Electronics Limited
SOT-323 Plastic-Encapsulated Transistors
Transys Electronics Limited