MJH11018 Datasheet - Inchange Semiconductor
MFG CO.

Inchange Semiconductor
DESCRIPTION
• High DC Current Gain-
: hFE = 400(Min)@ IC= 10A
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 150V(Min)
• Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.5V(Max)@ IC= 10A
= 4.0V(Max)@ IC= 15A
• Complement to Type MJH11017
APPLICATIONS
• Designed for general purpose amplifiers ,low frequency
switching and motor control applications.
Part Name
Description
View
MFG CO.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.