MJE700 Datasheet - Inchange Semiconductor
MFG CO.
Inchange Semiconductor
DESCRIPTION
• Collector–Emitter Breakdown Voltage—
: V(BR)CEO =-60 V
• DC Current Gain—
: hFE = 750(Min) @ IC=-1.5 A
• Complement to Type MJE800
APPLICATIONS
• Designed for general-purpose amplifier and low-speed switching applications
Part Name
Description
View
MFG CO.
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
