MJE18006 Datasheet - New Jersey Semiconductor
MFG CO.

New Jersey Semiconductor
DESCRIPTION
• Collector-Base Breakdown Voltage-
:V(BR)CBO=1000V(Min)
• High Switching Speed
APPLICATIONS
• Designed for use in 220V line-operated switchmode power
supplies and electronic light ballasts
Part Name
Description
View
MFG CO.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor