datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  Unisonic Technologies  >>> MJE13002G-B-T92-R PDF

MJE13002G-B-T92-R Datasheet - Unisonic Technologies

MJE13002 image

Part Name
MJE13002G-B-T92-R

Other PDF
  no available.

PDF
DOWNLOAD     

page
9 Pages

File Size
262.5 kB

MFG CO.
UTC
Unisonic Technologies 

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION
The UTC MJE13002 designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.


FEATURES
* Collector-Emitter Sustaining Voltage: VCEO (sus)=300V.
* Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @Ic=1.0A, IB =0.25A
* Switch Time- tf =0.7μs(Max.) @Ic=1.0A.


Part Name
Description
View
MFG CO.
Silicon NPN Epitaxial Transistor
PDF
Galaxy Semi-Conductor
Silicon NPN Epitaxial Transistor
PDF
Renesas Electronics
Silicon NPN Epitaxial Transistor
PDF
KEXIN Industrial
Silicon NPN Epitaxial Transistor
PDF
Renesas Electronics
SILICON EPITAXIAL NPN TRANSISTOR
PDF
Semelab - > TT Electronics plc
SILICON EPITAXIAL NPN TRANSISTOR ( Rev : 1996 )
PDF
Semelab - > TT Electronics plc
NPN Silicon epitaxial Transistor
PDF
Shenzhen Luguang Electronic Technology Co., Ltd
NPN Silicon Epitaxial Transistor
PDF
KEXIN Industrial
NPN Silicon Epitaxial Transistor
PDF
Semtech Electronics LTD.
NPN Silicon Epitaxial Transistor
PDF
KEXIN Industrial

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]