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MJD253 Datasheet - Inchange Semiconductor

MJD253 image

Part Name
MJD253

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page
3 Pages

File Size
255.8 kB

MFG CO.
Iscsemi
Inchange Semiconductor 

DESCRIPTION
• High DC Current Gain-
   : hFE = 40(Min) @ IC= -0.2 A
• Low Collector Saturation Voltage-
   : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A
• Complement to the NPN MJD243
• Minimum Lot-to-Lot variations for robust device performance
   and reliable operation


APPLICATIONS
• Designed for low voltage, low -power ,high-gain audio
   amplifier applications.


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