MJD243 Datasheet - Inchange Semiconductor
MFG CO.

Inchange Semiconductor
DESCRIPTION
• DC Current Gain-
: hFE = 40(Min) @ IC= 0.2 A
• Low Collector Saturation Voltage-
: VCE(sat) = 0.3V(Max.)@ IC= 0.5 A
• Complement to the PNP MJD253
• Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
• Designed for low power audio amplifier and low-current,
high-speed switching applications.
Part Name
Description
View
MFG CO.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor