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MJD128T4G(2012) Datasheet - ON Semiconductor

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MJD128T4G

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MFG CO.
ONSEMI
ON Semiconductor 

Complementary Darlington Power Transistor
DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching applications.


FEATUREs
• Monolithic Construction With Built−in Base−Emitter Shunt Resistors
• High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
• Epoxy Meets UL 94 V−0 @ 0.125 in.
• ESD Ratings:
    ♦ Human Body Model, 3B > 8000 V
    ♦ Machine Model, C > 400 V
• NJV Prefix for Automotive and Other Applications Requiring
    Unique Site and Control Change Requirements; AEC−Q101
    Qualified and PPAP Capable
• These are Pb−Free Devices*

Page Link's: 1  2  3  4  5  6 

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