MJD117(1997) Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
DESCRIPTION
The MJD112 and MJD117 form complementary PNP - NPN pairs.
They are manufactured using Epitaxial Base technology for cost-effective performance.
■ SGS-THOMSON PREFERRED SALESTYPES
■ LOW BASE-DRIVE REQUIREMENTS
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
■ SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
■ ELECTRICAL SIMILAR TO TIP112 AND
TIP117
APPLICATIONS
■ GENERAL PURPOSE SWITCHING AND
AMPLIFIER
Part Name
Description
View
MFG CO.
Darlington Complementary Silicon Power Transistors ( Rev : 2016 )
ON Semiconductor
Darlington Complementary Silicon Power Transistors ( Rev : 2007 )
ON Semiconductor
Darlington Complementary Silicon Power Transistors
ON Semiconductor
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
New Jersey Semiconductor
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Mospec Semiconductor
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Comset Semiconductors
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
New Jersey Semiconductor
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMicroelectronics
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMicroelectronics
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMicroelectronics