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MJ900 Datasheet - Inchange Semiconductor
MFG CO.

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-60V(Min.)
• High DC Current Gain-
: hFE= 1000(Min.)@IC=-3A
• Low Collector Saturation Voltage-
: VCE (sat)=-2.0V(Max.)@ IC=-3A
APPLICATIONS
• Designed for use as output devices in complementary general purpose amplifier applications.
Part Name
Description
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MFG CO.
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Silicon PNP Darlington Power Transistor
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Silicon PNP Darlington Power Transistor
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Silicon PNP Darlington Power Transistor
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Silicon PNP Darlington Power Transistor
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Silicon PNP Darlington Power Transistor
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Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor