Internally Clamped N-Channel IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate Collector Over–Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver.

• Temperature Compensated Gate – Collector Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability