Part Name
MGFS45V2123A
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MFG CO.
MITSUBISHI ELECTRIC
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MGFS45V2123A(1999) Datasheet - MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
DESCRIPTION
The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=2.1 - 2.3 GHz
High power gain
GLP = 12 dB (TYP.) @ f=2.1 - 2.3GHz
High power added efficiency
P.A.E. = 45 % (TYP.) @ f=2.1 - 2.3GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 2.1 - 2.3 GHz band power amplifier
item 51 : 2.1 - 2.3 GHz band digital radio communication
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Part Name
Description
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3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1999 )
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1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1999 )
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2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET ( Rev : 1999 )
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