MGFK39V4045 Datasheet - MITSUBISHI ELECTRIC
MFG CO.

MITSUBISHI ELECTRIC
DESCRIPTION
GaAs power FET especially designed for use in 14.0~14.5 GHz band amplifiers. The hermetically sealed metal-ceramic The MGFK39V4045 is an internally impedance matched package guarantees high reliability.
FEATURES
● Internally impedance matched
● High output power
P1dB=8W (TYP.) @f=14.0~14.5GHz
● High linear power gain
GLP=5.5dB (TYP.) @f=14.0~14.5GHz
● High power added efficiency
ηadd =20%(TYP.) @f=14.0~14.5GHz, P1dB
APPLICATION
For use in 14.0~14.5GHz band amplifiers
Part Name
Description
View
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