MGFC42V5258(2004) Datasheet - MITSUBISHI ELECTRIC
MFG CO.

MITSUBISHI ELECTRIC
DESCRIPTION
The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 16W (TYP.) @ f=5.2 - 5.8 GHz
High power gain
GLP = 10.5 dB (TYP.) @ f=5.2 - 5.8GHz
High power added efficiency
P.A.E. = 31 % (TYP.) @ f=5.2 - 5.8GHz
APPLICATION
5.2 - 5.8 GHz band power amplifier
Part Name
Description
View
MFG CO.
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET ( Rev : V2 )
MITSUBISHI ELECTRIC
5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
MITSUBISHI ELECTRIC
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
Mitsumi
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
3.7~4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET
Mitsumi