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MGFC42V5258(2004) Datasheet - MITSUBISHI ELECTRIC

MGFC42V5258 image

Part Name
MGFC42V5258

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MFG CO.
Mitsubishi
MITSUBISHI ELECTRIC  

DESCRIPTION
The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
   Class A operation
   Internally matched to 50(ohm) system
   High output power
      P1dB = 16W (TYP.) @ f=5.2 - 5.8 GHz
   High power gain
      GLP = 10.5 dB (TYP.) @ f=5.2 - 5.8GHz
   High power added efficiency
      P.A.E. = 31 % (TYP.) @ f=5.2 - 5.8GHz


APPLICATION
   5.2 - 5.8 GHz band power amplifier

Page Link's: 1  2 

Part Name
Description
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MFG CO.
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET
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5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET ( Rev : V2 )
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5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET ( Rev : 1997 )
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3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET
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3.7~4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
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C band internally matched power GaAs FET
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