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MGFC39V3436(2011) Datasheet - MITSUBISHI ELECTRIC

MGFC39V3436 image

Part Name
MGFC39V3436

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2 Pages

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MFG CO.
Mitsubishi
MITSUBISHI ELECTRIC  

DESCRIPTION
The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


FEATURES
   Class A operation
   Internally matched to 50(ohm) system
   ● High output power
      P1dB=8W (TYP.) @f=3.4 – 3.6GHz
   ● High power gain
      GLP=12.5dB (TYP.) @f=3.4 – 3.6GHz
   ● High power added efficiency
      P.A.E.=32% (TYP.) @f=3.4 – 3.6GHz
   ● Low distortion [item -51]
      IM3=-45dBc (TYP.) @Po=28dBm S.C.L


APPLICATION
● item 01 : 3.4 – 3.6 GHz band power amplifier
● item 51 : 3.4 – 3.6 GHz band digital radio communication

Page Link's: 1  2 

Part Name
Description
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MFG CO.
C band internally matched power GaAs FET
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Mitsumi
C band internally matched power GaAs FET ( Rev : 2011 )
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C band internally matched power GaAs FET
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C band internally matched power GaAs FET
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C band internally matched power GaAs FET ( Rev : 2011 )
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MITSUBISHI ELECTRIC
C band internally matched power GaAs FET
PDF
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
PDF
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
PDF
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
PDF
MITSUBISHI ELECTRIC
C band internally matched power GaAs FET ( Rev : 2011 )
PDF
MITSUBISHI ELECTRIC

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