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MGF1402B Datasheet - MITSUBISHI ELECTRIC

MGF1402B image

Part Name
MGF1402B

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6 Pages

File Size
344.3 kB

MFG CO.
Mitsubishi
MITSUBISHI ELECTRIC  

DESCRIPTION
The MGF1402B is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.


FEATURES
● Low noise figure NFmin = 3.0dB (MAX.) @ f = 12 GHz
● High associated gain Gs = 8dB (MIN.) @ f = 12 GHz
● High reliability and stability


APPLICATION
   S to X band low-noise amplifiers and oscillators

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