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MGF0916A Datasheet - Mitsumi

MGF0916A image

Part Name
MGF0916A

Description
High-power GaAs FET (small signal gain stage)

Other PDF
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page
4 Pages

File Size
113.4 kB

MFG CO.
Mitsumi
Mitsumi 

DESCRIPTION
The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

FEATURES
High output power 
  Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm
High power gain
  Gp=19dB(TYP.) @f=1.9GHz
High power added efficiency
  add=30%(TYP.) @f=1.9GHz,Pin=5dBm
Hermetic Package

APPLICATION
For UHF Band power amplifiers

Page Link's: 1  2  3  4 

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