DESCRIPTION
The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.

FEATURES
● High output power
   Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm
● High power gain
   Gp=14.5 dB(TYP.) @f=1.9GHz
● High power added efficiency
   hadd=50 %(TYP.) @f=1.9GHz,Pin=23dBm
● Hermetic Package

APPLICATION
● For UHF Band power amplifiers