DESCRIPTION
The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

FEATURES
• Class A operation
• High output power
    P1dB=41.0dBm(TYP.) @f=2.3GHz
• High power gain
    GLP=11.0dB(TYP.) @f=2.3GHz
• High power added efficiency
    P.A.E =40%(TYP.) @f=2.3GHz,P1dB
• Hermetically sealed metal-ceramic package with ceramic lid

APPLICATION
• For UHF Band power amplifiers