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MBT3906DW1T1(2005) Datasheet - ON Semiconductor

MBT3906DW1T1G image

Part Name
MBT3906DW1T1

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6 Pages

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100.9 kB

MFG CO.
ON-Semiconductor
ON Semiconductor 

Dual General Purpose Transistor

The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium.


FEATUREs
• hFE, 100−300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• Pb−Free Package is Available


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