Part Name
MBRP20060CTG
Description
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page
6 Pages
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MFG CO.
ON Semiconductor
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MBRP20060CTG(2006) Datasheet - ON Semiconductor
ON Semiconductor
POWERTAP II SWITCHMODE Power Rectifier
These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal.
FEATUREs
• Dual Diode Construction − May Be Paralleled for Higher Current Output
• Guardring for Stress Protection
• Low Forward Voltage
• 150°C Operating Junction Temperature
• Pb−Free Package is Available*
Part Name
Description
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MFG CO.
SWITCHMODE Ultrafast Power Rectifier POWERTAP II Package ( Rev : 1995 )
Motorola => Freescale
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