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MBRB1045G(2012) Datasheet - ON Semiconductor

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MBRB1045G

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MFG CO.
ON-Semiconductor
ON Semiconductor 

SWITCHMODE Schottky Power Rectifier
Surface Mount Power Package

This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.


FEATUREs
• Guardring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Short Heat Sink Tab Manufactured − Not Sheared!
• AEC−Q101 Qualified and PPAP Capable
• SBRB and SBRD8 Prefixes for Automotive and Other Applications
    Requiring Unique Site and Control Change Requirements
• All Packages are Pb−Free*

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