. . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.

• Very Low Forward Voltage (0.55 V Maximum @ 25 Amps)
• Matched Dual Die Construction (12.5 A per Leg or 25 A per
   Package)
• Guardring for Stress Protection
• Highly Stable Oxide Passivated Junction (125°C Operating
   Junction Temperature)
• Epoxy Meets UL94, VO at 1/8″