PRODUCT DESCRIPTION
The design of the MAT02 series of NPN dual monolithic transistors is optimized for very low noise, low drift, and low rBE. Precision Monolithics’ exclusive Silicon Nitride “TriplePassivation” process stabilizes the critical device parameters over wide ranges of temperature and elapsed time. Also, the high current gain (hFE) of the MAT02 is maintained over a wide range of collector current. Exceptional characteristics of the MAT02 include offset voltage of 50 µV max (A/E grades) and 150 µV max F grade. Device performance is specified over the full military temperature range as well as at 25°C.

FEATURES
    Low Offset Voltage: 50 mV max
    Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max
    High Gain (hFE): 500 min at IC = 1 mA
                                300 min at IC = 1 μA
    Excellent Log Conformance: rBE ≡ 0.3 Ω
    Low Offset Voltage Drift: 0.1 μV/°C max
    Improved Direct Replacement for LM194/394
    Available in Die Form