Part Name
M81019FP
Description
Other PDF
no available.
PDF
page
10 Pages
File Size
97.8 kB
MFG CO.

MITSUBISHI ELECTRIC
DESCRIPTION
M81019FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications.
FEATURES
Floating supply voltage up to 1200V
Low quiescent power supply current
Separate sink and source current output up to ±1A (typ)
Active Miller effect clamp NMOS with sink current up to –1A (typ)
Input noise filters
Over-current detection and output shutdown
High side under voltage lockout
FO pin which can input and output Fault signals to communicate with controllers and synchronize the shut down with other phases
Pb-free
24-Lead SSOP package
APPLICATIONS
Power MOSFET and IGBT gate driver for Medium and Micro inverter or general purpose.