LS841 Datasheet - Linear Technology
MFG CO.
Linear Technology
FEATURES
• LOW NOISE en = 8nV/√Hz TYP.
• LOW LEAKAGE IG = 10pA TYP.
• LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max.
• LOW OFFSET VOLTAGE IVGS1-2I= 2mV TYP.
Part Name
Description
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MFG CO.
LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
Linear Integrated System
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET ( Rev : V3 )
Micross Components
Low Noise, Low Drift, Monolithic Dual N-Channel JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components
LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Technology
