LS5909(2014) Datasheet - Linear Technology
MFG CO.
Linear Technology
FEATURES
LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max.
ULTRA LOW LEAKAGE IG = 150fA TYP.
LOW PINCHOFF VP= 2V TYP.
Part Name
Description
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MFG CO.
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
Linear Technology
ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER ( Rev : V2 )
Linear Integrated System
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
Linear Integrated System
