LS5906 Datasheet - Linear Integrated System
MFG CO.
Linear Integrated System
FEATURES
LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max.
ULTRA LOW LEAKAGE IG = 150fA TYP.
LOW PINCHOFF VP= 2V TYP.
Part Name
Description
View
MFG CO.
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Technology
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER ( Rev : 2014 )
Linear Technology
Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
Linear Technology
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET ( Rev : V3 )
Micross Components
