General Description
These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coeffcient inherent in MOS devices.

FEATUREs
► Ultra-low threshold
► High input impedance
► Low input capacitance
► Fast switching speeds
► Low on-resistance
► Freedom from secondary breakdown
► Low input and output leakage

APPLICATIONs
► Logic level interfaces
► Solid state relays
► Battery operated systems
► Photo voltaic drives
► Analog switches
► General purpose line drivers