GaAs infrared light emitting diode

For optical control systems

■ Features
• High-power output, high-efficiency: Ie = 9 mW/sr (min.)
• Emitted light spectrum is suited for silicon photodetectors
• Good radiant power output linearity with respect to input current
• Wide directivity: θ = 20° (typ.)
• Transparent epoxy resin package
• Long lead-wire type