LN4812LT1G(2018) Datasheet - Leshan Radio Company,Ltd
MFG CO.

Leshan Radio Company,Ltd
FEATURES
● VDS= 30V
● RDS(ON), VGS@4.5V, IDS@5A = 52mΩ
● RDS(ON), VGS@10V, IDS@6A = 38mΩ
● We declare that the material of product compliance with
RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
APPLICATIONS
● High density cell design for ultra low on-resistance
● Advanced trench process technology
● High power and current handling capability
Part Name
Description
View
MFG CO.
30V N-Channel Enhancement Mode MOSFET
Shenzhen Jin Yu Semiconductor Co., Ltd.
30V N-Channel Enhancement Mode MOSFET
Shanghai Leiditech Electronic Technology Co., Ltd
30V N-Channel Enhancement Mode MOSFET
Shanghai Leiditech Electronic Technology Co., Ltd
30V N-CHANNEL Enhancement Mode MOSFET
Cystech Electonics Corp.
30V N-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 1999 )
Zetex => Diodes
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Zetex => Diodes
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZP Semiconductor
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.