LMN200B02(2021) Datasheet - Diodes Incorporated.
MFG CO.

Diodes Incorporated.
General Description
LMN200B02 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on the input voltage and can support continuous maximum current of 200 mA . It also contains a discrete N-MOSFET that can be used as control. This N-MOSFET also has a built-in pull down resistor at its gate. The component can be used as a part of a circuit or as a stand alone discrete device.
FEATUREs
• Voltage Controlled Small Signal Switch
• N-MOSFET with Gate Pull-Down Resistor
• Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Part Name
Description
View
MFG CO.
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR
Diodes Incorporated.
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR ( Rev : 2021 )
Diodes Incorporated.
400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR ( Rev : 2012 )
Diodes Incorporated.
400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR
Diodes Incorporated.
400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR ( Rev : 2021 )
Diodes Incorporated.
400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET ( Rev : Rev7-2 )
Diodes Incorporated.
400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET
Diodes Incorporated.
400mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET ( Rev : 2021 )
Diodes Incorporated.
200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE
Diodes Incorporated.
200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE ( Rev : Rev2-2 )
Diodes Incorporated.