
Sharp Electronics
32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY
The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V and VPP=1.65V-3.6V or 11.7V-12.3V. Its low voltage operation capability greatly extends battery life for portable applications.
■ 32M density with 16Bit I/O Interface
■ High Performance Reads
• 80/35ns 8-Word Page Mode
■ Configurative 4-Plane Dual Work
• Flexible Partitioning
• Read operations during Block Erase or (Page Buffer) Program
• Status Register for Each Partition
■ Low Power Operation
• 2.7V Read and Write Operations
• VCCQ for Input/Output Power Supply Isolation
• Automatic Power Savings Mode Reduces ICCR in Static Mode
■ Enhanced Code + Data Storage
• 5µs Typical Erase/Program Suspends
■ OTP (One Time Program) Block
• 4-Word Factory-Programmed Area
• 4-Word User-Programmable Area
■ High Performance Program with Page Buffer
• 16-Word Page Buffer
• 5µs/Word (Typ.) at 12V VPP
■ Operating Temperature -40°C to +85°C
■ CMOS Process (P-type silicon substrate)
■ Flexible Blocking Architecture
• Eight 4K-word Parameter Blocks
• Sixty-three 32K-word Main Blocks
• Top Parameter Location
■ Enhanced Data Protection Features
• Individual Block Lock and Block Lock-Down with Zero-Latency
• All blocks are locked at power-up or device reset.
• Absolute Protection with VPP≤VPPLK
• Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions
■ Automated Erase/Program Algorithms
• 3.0V Low-Power 11µs/Word (Typ.)
Programming
• 12V No Glue Logic 9µs/Word (Typ.)
Production Programming and 0.5s Erase (Typ.)
■ Cross-Compatible Command Support
• Basic Command Set
• Common Flash Interface (CFI)
■ Extended Cycling Capability
• Minimum 100,000 Block Erase Cycles
■ 48-Lead TSOP
■ ETOXTM* Flash Technology
■ Not designed or rated as radiation hardened