INTRODUCTION
Sharp’s LH28F020SU-N 2M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 5.0 V single voltage operations and very high read/write performance, the LH28F020SU-N is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES
• 256K × 8 Bit Configuration
• 5 V Write/Erase Operation (5 V VPP)
   – No Requirement for DC/DC Converter to Write Erase
• 80 ns Maximum Access Time
• 16 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
   – Command User Interface
   – Status Register
• System Performance Enhancement
   – Erase Suspend for Read
   – Two-Byte Write
   – Full Chip Erase
• Data Protection
   – Hardware Erase/Write Lockout during Power Transitions
   – Software Erase/Write Lockout
• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)
• 5 µA (TYP.) ICC in CMOS Standby
• State-of-the-Art 0.55 µm ETOX™ Flash Technology
• Packages
   – 32-Pin, 525 mil. SOP Package
   – 32-Pin, 1.2 mm × 8 mm × 20 mm TSOP (Type I) Package