Overview
The LE28FV4001M, T, R Series are 4 MEG flash memory products that feature a 542488-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. The LE28FV4001M also supports high-speed data rewriting by providing a sector (256 bytes) erase function.

FEATUREs
• Highly reliable 2 layer polysilicon CMOS flash EEPROM process
• Read and write operations using a 3.3 V single-voltage power supply
• High-speed access: 200 and 250 ns
• Low power
   — Operating (read): 10 mA (maximum)
   — Standby: 20 µA (maximum)
• Highly reliable read write
   —Number of sector write cycles: 104 cycles
   — Data retention: 10 years
• Address and data latches
• Sector erase function: 256 bytes per sector
• Self-timer erase/program
• Byte program time: 35 µs (maximum)
• Write complete detection function: Toggle bit/Data poling
• Hardware and software data protection functions
• Pin assignment conforms to the JEDEC byte-wide EEPROM standard.
• Package
   SOP 32-pin (525 mil) plastic package: LE28FV4001M
   TSOP 42-pin (10 × 14 mm) plastic package:LE28FV4001T
   TSOP 40-pin (10×14 mm)plastic package: LE28FV4001R