
ON Semiconductor
Description
The KAF−1001 Image Sensor is a high-performance charge-coupled device (CCD) designed for a wide range of image sensing applications.
The sensor incorporates true two-phase CCD technology, simplifying the support circuits required to drive the sensor as well as reducing dark current without compromising charge capacity. The sensor also utilizes the TRUESENSE Transparent Gate Electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode.
Selectable on-chip output amplifiers allow operation to be optimized for different imaging needs: Low Noise (when using the high-sensitivity output) or Maximum Dynamic Range (when using the low-sensitivity output).
FEATUREs
• True Two Phase Full Frame Architecture
• TRUESENSE Transparent Gate Electrode
for High Sensitivity
• 100% Fill Factor
• Low Dark Current
• Single Readout Register
• User-selectable Outputs Allow either Low
Noise or High Dynamic Range Operation
APPLICATIONs
• Scientific
• Medical