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K7R161884B(2004) Datasheet - Samsung

K7R161884B image

Part Name
K7R161884B

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18 Pages

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413.2 kB

MFG CO.
Samsung
Samsung 

GENERAL DESCRIPTION
The K7R163684B and K7R161884B are 18,874,368-bits QDR(Quad Data Rate) Synchronous Pipelined Burst SRAMs.
They are organized as 524,288 words by 36bits for K7R163684B and 1,048,576 words by 18 bits for K7R161884B.


FEATURES
• 1.8V+0.1V/-0.1V Power Supply.
• DLL circuitry for wide output data valid window and future freguency scaling.
• I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
• Separate independent read and write data ports with concurrent read and write operation
• HSTL I/O
• Full data coherency, providing most current data .
• Synchronous pipeline read with self timed late write.
• Registered address, control and data input/output.
• DDR(Double Data Rate) Interface on read and write ports.
• Fixed 4-bit burst for both read and write operation.
• Clock-stop supports to reduce current.
• Two input clocks(K and K) for accurate DDR timing at clock rising edges only.
• Two input clocks for output data(C and C) to minimize clock-skew and flight-time mismatches.
• Two echo clocks (CQ and CQ) to enhance output data traceability.
• Single address bus.
• Byte write (x18, x36) function.
• Sepatate read/write control pin(R and W)
• Simple depth expansion with no data contention.
• Programmable output impenance.
• JTAG 1149.1 compatible test access port.
• 165FBGA(11x15 ball array FBGA) with body size of 13x15mm

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